47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
JDCD03-001-003
Overview
Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diameter. It is used in high-power electronics. The second type is the epitaxial crystalline silicon carbide wafer. This type of wafer is created by adding layers of single silicon carbide crystals to a surface. This method requires precise control of the thickness of the material, and is referred to as n-type epitaxy.
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Property
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P-MOS Grade |
P-SBD Grade |
D Grade |
| Crystal Form |
4H |
| Polytype |
None Permitted |
Area≤5% |
| (MPD) a |
≤0.2 /cm2 |
≤0.5 /cm2 |
≤5 /cm2 |
| Hex Plates |
None Permitted |
Area≤5% |
| Hexagonal Polycrystal |
None Permitted |
| Inclusions a |
Area≤0.05% |
Area≤0.05% |
N/A |
| Resistivity |
0.015Ω•cm—0.025Ω•cm |
0.015Ω•cm—0.025Ω•cm |
0.014Ω•cm—0.028Ω•cm |
| (EPD)a |
≤4000/cm2 |
≤8000/cm2 |
N/A |
| (TED)a |
≤3000/cm2 |
≤6000/cm2 |
N/A |
| (BPD)a |
≤1000/cm2 |
≤2000/cm2 |
N/A |
| (TSD)a |
≤600/cm2 |
≤1000/cm2 |
N/A |
| Stacking Fault |
≤0.5% Area |
≤1% Area |
N/A |
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Surface Metal Contamination
|
(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
|
| Diameter |
150.0 mm +0mm/-0.2mm |
| Surface Orientation |
Off-Axis:4°toward <11-20>±0.5 ° |
| Primary Flat Length |
47.5 mm ± 1.5 mm |
| Secondary Flat Length |
No Secondary Flat |
| Primary Flat Orientation |
Parallel to<11-20>±1° |
| Secondary Flat Orientation |
N/A |
| Orthogonal Misorientation |
±5.0° |
| Surface Finish |
C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge |
Beveling |
|
Surface Roughness
(10μm×10μm)
|
Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm |
| Thickness a |
350.0μm± 25.0 μm |
| LTV(10mm×10mm)a |
≤2μm |
≤3μm |
| (TTV)a |
≤6μm |
≤10μm |
| (BOW) a |
≤15μm |
≤25μm |
≤40μm |
| (Warp) a |
≤25μm |
≤40μm |
≤60μm |
| Chips/Indents |
None Permitted ≥0.5mm Width and Depth |
Qty.2 ≤1.0 mm Width and Depth |
|
Scratches a
(Si Face,CS8520)
|
≤5 and Cumulative Length≤0.5×Wafer Diameter |
≤5 and Cumulative Length≤1.5×Wafer
Diameter
|
| TUA(2mm*2mm) |
≥98% |
≥95% |
N/A |
| Cracks |
None Permitted |
| Contamination |
None Permitted |
| Property |
P-MOS Grade |
P-SBD Grade |
D Grade |
| Edge Exclusion |
3mm |
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Product Tags:
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° Images
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